pawel.kempisty@unipress.waw.pl
@ http://www.unipress.waw.pl/~pkempisty
ORCID iD 0000-0003-0700-5560 ResearcherID A-6769-2019
Paweł Kempisty is an Assistant Professor in the Crystal Growth Laboratory at the Institute of High-Pressure Physics PAS. He received a PhD from the IHPP PAS in 2015. Afterward, he spent a one-year postdoctoral fellowship in the Center for Integrated Research of Future Electronics (CIRFE) at the Nagoya University, Japan. In 2019 he completed a 3-month fellowship at CEA-LETI Grenoble, France, within a French Government Scholarship (BGF). Since 2019 he is also an Assistant Professor (part-time position) at the Research Institute for Applied Mechanics (RIAM) at Kyushu University, Fukuoka, Japan. His research is mainly focused on multi-scale modeling of the growth and properties of III-nitride semiconductors.
Research interests:
III-nitride semiconductors, crystal growth modeling and simulations, ab initio calculations, thermodynamics, surface physics, computational fluid dynamics (CFD)
Major publications:
Kangawa Y., Kusaba A., Kempisty P., Shiraishi K., Nitta S., Amano H., Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE, Crystal Growth & Design (2021), DOI: 10.1021/acs.cgd.0c01564
Yosho D., Matsuo Y., Kusaba A., Kempisty P., Kangawa Y., Murakami H., Koukitu A., Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach, CrystEngComm 23, 1423-1428 (2021), DOI: 10.1039/D0CE01683G
Kempisty P., Strak P., Sakowski K., Kangawa Y., Krukowski S., Ab initio and thermodynamic picture of Al adsorption of AlN (000-1) surface - Role of bond creation and electron transition contributions, Applied Surface Science 532, 147419 (2020), DOI: 10.1016/j.apsusc.2020.147419
Kempisty P., Kangawa Y., Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations, Physical Review B 100, 085304 (2019), DOI: 10.1103/PhysRevB.100.085304
Kempisty P., Kangawa Y., Kusaba A., Shiraishi K., Krukowski S., Bockowski M., Kakimoto K., Amano H., DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy, Applied Physics Letters 111, 141602 (2017), DOI: 10.1063/1.4991608
bocian@unipress.waw.pl
@ www.unipress.waw.pl/growth/
ORCID iD: 0000-0003-1616-685X
Michał Boćkowski received the M.Sc. Eng. in Solid State Physics from the Warsaw University of Technology, Poland, (1989); the Ph.D. in the Chemistry of Solids from the University Montpellier II, France, (1995) and the D.Sc, (habilitation in physics), from the Institute of Physics Polish Academy of Sciences (IP PAS), Poland, (2013). From 2008 to 2015 he was a vice president at TopGaN Ltd., Poland. He is currently a professor and the head of Crystal Growth Laboratory at the Institute of High Pressure Physics PAS as well as Designated/Visiting professor at Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University and Institute of Global Innovation Research (IGIR), Tokyo University of Agriculture and Technology (TUAT), Japan.
Semiconductors Science and Technology; Nitride Semiconductors; Crystal Growth; High Pressure Science and Technology; Glasses and Soft Matter
Technology of Gallium Nitride Crystal Growth" (Springer Series in Materials Science 133) Springer; 1st Edition. (Feb 12 2010) ISBN-10: 3642048285; ISBN-13: 978-3642048289 ed. by D. Ehrentraut, E. Meissner and M. Boćkowski
Bockowski M., Iwinska M., Amilusik M., Fijalkowski M., Lucznik B. and Sochacki T., Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds, Topical Review in Semicond. Sci. Technol. 31 (2016) 093002
Sakurai H., Omori M., Yamada S., Furukawa Y., Suzuki H., Narita T., Kataoka K., Horita M., Bockowski M., Suda J. and Kachi T., Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing, Appl. Phys. Lett. 115 (14) 142104 (2019)
Zajac M, Kucharski R, Grabianska K, Gwardys-Bak A, Puchalski A, Wasik D, Litwin-Staszewska E, Piotrzkowski R, Domagala JZ, Bockowski M., Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives, Prog. Cryst. Growth Charact. Mater. 64, 63 (2018)
Kucharski R., Sochacki T., Lucznik B. and Bockowski M. Bulk GaN growth J. Appl. Phys. 128, 050902 (2020)
wierzbowska@unipress.waw.pl
malwi45@gmail.com
@ www.unipress.waw.pl/~wierzbowska
ORCID iD: 0000-0002-4826-7076
Since 2017 Małgorzata Wierzbowska is a professor of IHPP PAS. She received the M.Sc. in Physics from the Nicolas Copernicus University, Toruń, Poland, (1994), Ph.D. in the Theoretical Physics (2000), and the D.Sc (habilitation in physics) from the Institute of Physics Polish Academy of Sciences (IP PAS), Poland, (2014). She was a fellow of Roman Herzog Foundation in Bochum (1998-1990) and Wurzburg (2002), Germany, and a postdoctoral researcher in Lund, Sweden (2001), Dublin, Ireland (2003), Triest, Italy (2004-2007). She is interested ab the initio symulations of magnetic, excitonic, and superconducting properties of novel materials with the density functional theory, Wannier functions, and advanced many-body methods.
Perovskite LEDs and lasers, TMDs, MXenes, excitonic properties, Berry-phase
Tsunetomo N., Iguchi S., Wierzbowska M., Ueda A., Won Y., Heo S., Jeong Y., Wakayama Y., Marumoto K. (2021) Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance, In: Communications Materials 2, 27
Pizzi G., Vitale V., Arita R., Blügel S., Freimuth F., Géranton G., Gibertini M., Gresch D., Johnson C., Koretsune T., Ibanez J., Lee H., Lihm J.-M., Marchand D., Marrazzo A., Mokrousov Y., Mustafa J. I., Nohara Y., Nomura Y., Paulatto L., Poncé S., Ponweiser T., Qiao J., Thöle F., Tsirkin S. S., Wierzbowska M., Marzari N., Vanderbilt D., Souza I., Mostofi A. A., Yates J. R. (2020) Wannier90 as a community code: new features and applications, In: Journal of Physics: Condensed Matter 32, 165902
Wierzbowska M. (2019) Deprotonation and vacancies at CH3NH3PbI3/ZnO and CH3NH3PbI3/GaN, detected in the theoretical XANES, In: Journal of Materials Chemistry C 7, 5307-5313
Wierzbowska M., Melendez J. J., Varsano D. (2018) Breathing bands due to molecular order in CH3NH3PbI3, In: Computational Materials Science 142, 361-371
Wierzbowska M. (2019) Ferromagnetic topological crystalline insulating phase in the π-stacked graphene nanobelts under a small pressure, In: SN Applied Sciences 1, 748
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