ORCID iD 0000-0003-0700-5560 ResearcherID A-6769-2019
Paweł Kempisty is an Assistant Professor in the Crystal Growth Laboratory at the Institute of High-Pressure Physics PAS. He received a PhD from the IHPP PAS in 2015. Afterward, he spent a one-year postdoctoral fellowship in the Center for Integrated Research of Future Electronics (CIRFE) at the Nagoya University, Japan. In 2019 he completed a 3-month fellowship at CEA-LETI Grenoble, France, within a French Government Scholarship (BGF). Since 2019 he is also an Assistant Professor (part-time position) at the Research Institute for Applied Mechanics (RIAM) at Kyushu University, Fukuoka, Japan. His research is mainly focused on multi-scale modeling of the growth and properties of III-nitride semiconductors.
III-nitride semiconductors, crystal growth modeling and simulations, ab initio calculations, thermodynamics, surface physics, computational fluid dynamics (CFD)
Kangawa Y., Kusaba A., Kempisty P., Shiraishi K., Nitta S., Amano H., Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE, Crystal Growth & Design (2021), DOI: 10.1021/acs.cgd.0c01564
Yosho D., Matsuo Y., Kusaba A., Kempisty P., Kangawa Y., Murakami H., Koukitu A., Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach, CrystEngComm 23, 1423-1428 (2021), DOI: 10.1039/D0CE01683G
Kempisty P., Strak P., Sakowski K., Kangawa Y., Krukowski S., Ab initio and thermodynamic picture of Al adsorption of AlN (000-1) surface - Role of bond creation and electron transition contributions, Applied Surface Science 532, 147419 (2020), DOI: 10.1016/j.apsusc.2020.147419
Kempisty P., Kangawa Y., Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations, Physical Review B 100, 085304 (2019), DOI: 10.1103/PhysRevB.100.085304
Kempisty P., Kangawa Y., Kusaba A., Shiraishi K., Krukowski S., Bockowski M., Kakimoto K., Amano H., DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy, Applied Physics Letters 111, 141602 (2017), DOI: 10.1063/1.4991608