Supervisors from Institute of High Pressure Physics


ORCID iD  0000-0003-0700-5560   ResearcherID  A-6769-2019 

Paweł Kempisty is an Assistant Professor in the Crystal Growth Laboratory at the Institute of High-Pressure Physics PAS. He received a PhD from the IHPP PAS in 2015. Afterward, he spent a one-year postdoctoral fellowship in the Center for Integrated Research of Future Electronics (CIRFE) at the Nagoya University, Japan. In 2019 he completed a 3-month fellowship at CEA-LETI Grenoble, France, within a French Government Scholarship (BGF). Since 2019 he is also an Assistant Professor (part-time position) at the Research Institute for Applied Mechanics (RIAM) at Kyushu University, Fukuoka, Japan. His research is mainly focused on multi-scale modeling of the growth and properties of III-nitride semiconductors.

Research interests: 

III-nitride semiconductors, crystal growth modeling and simulationsab initio calculations, thermodynamics, surface physicscomputational fluid dynamics (CFD)

Major publications:  

Kangawa Y., Kusaba A., Kempisty P.Shiraishi K., Nitta S., Amano H., Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE, Crystal Growth & Design (2021), DOI: 10.1021/acs.cgd.0c01564

Yosho D., Matsuo Y., Kusaba A., Kempisty P.Kangawa Y., Murakami H., Koukitu A., Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach, CrystEngComm 23, 1423-1428 (2021), DOI: 10.1039/D0CE01683G

Kempisty P.Strak P., Sakowski K., Kangawa Y., Krukowski S., Ab initio and thermodynamic picture of Al adsorption of AlN (000-1) surface - Role of bond creation and electron transition contributions, Applied Surface Science 532, 147419 (2020), DOI: 10.1016/j.apsusc.2020.147419

Kempisty P., Kangawa Y., Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations, Physical Review B 100, 085304 (2019), DOI: 10.1103/PhysRevB.100.085304

Kempisty P., Kangawa Y., Kusaba A., Shiraishi K., Krukowski S., Bockowski M., Kakimoto K., Amano H., DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy, Applied Physics Letters 111, 141602 (2017), DOI: 10.1063/1.4991608